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| PNP Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary type: BCX 12 (NPN) q 2 1 3 BCX 13 Type BCX 13 Marking BCX 13 Ordering Code Q62702-C26 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 125 125 5 800 1 100 200 625 150 - 65 ... + 150 Unit V mA A mA mW C 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 1 5.91 BCX 13 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain1) IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 500 mA, IB = 50 mA AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo - - 120 12 - - MHz pF V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 - - IEB0 hFE 25 50 63 40 VCEsat VBEsat - - - - - - - - - - - - 1.0 1.6 V - - - - 100 10 100 nA A Values typ. max. Unit 125 125 5 - - - - - - V nA - 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 2 BCX 13 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 1 V Collector cutoff current ICB0 = f (TA) VCB = VCBmax Semiconductor Group 3 BCX 13 DC current gain hFE = f (IC) VCE = 1 V Transition frequency fT = f (IC) f = 20 MHz, VCE = 5 V, TA = 25 C Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Semiconductor Group 4 |
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